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VCE IC
= =
6500 V 600 A
ABB HiPakTM IGBT Module
5SNA 0600G650100
Doc. No. 5SYA1558-02 Jan 06
* Low-loss, rugged SPT chip-set * Smooth switching SPT chip-set for good EMC * High insulation package * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance
Maximum rated values
Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature
1)
Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg Ms
Conditions VGE = 0 V, Tvj 25 C Tc = 85 C tp = 1 ms, Tc = 85 C
min
max 6500 600 1200
Unit V A A V W A A A s V C C C C Nm
-20 Tc = 25 C, per switch (IGBT)
20 11900 600 1200
VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave VCC = 4400 V, VCEM CHIP 6500 V VGE 15 V, Tvj 125 C 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2
6000 10 10200 125 125 125 125 6 10 3
Junction operating temperature Case temperature Storage temperature Mounting torques
1) 2) 2)
Mt1 Mt2
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNA 0600G650100
IGBT characteristic values
Parameter Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
3)
Symbol V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres td(on) tr td(off) tf
Conditions VGE = 0 V, IC = 10 mA, Tvj = 25 C IC = 600 A, VGE = 15 V VCE = 6500 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
min 6500
typ
max
Unit V
4.2 5.4 70 -500 6.5 7.4 8.0 143
4.8 5.9 12 120 500 8.0
V V mA mA nA V C
VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 240 mA, VCE = VGE, Tvj = 25 C IC = 600 A, VCE = 3600 V, VGE = -15 V .. 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 3600 V, IC = 600 A, RG = 3.9 , VGE = 15 V, L = 280 nH, inductive load VCC = 3600 V, IC = 600 A, RG = 3.9 , VGE = 15 V, L = 280 nH, inductive load VCC = 3600 V, IC = 600 A, VGE = 15 V, RG = 3.9 , L = 280 nH, inductive load VCC = 3600 V, IC = 600 A, VGE = 15 V, RG = 3.9 , L = 280 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
6.62 1.27 640 570 270 240 1540 1860 620 960 3800
nF
ns ns ns ns
Turn-on switching energy
Eon
mJ 4900 1950 mJ 3150 2700 18 A nH m
Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip
3) 4)
Eoff ISC L CE RCC'+EE'
tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 4400 V, VCEM CHIP 6500 V TC = 25 C TC = 125 C
0.07 0.1
Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1558-02 Jan 06 page 2 of 9
5SNA 0600G650100
Diode characteristic values
Parameter Forward voltage
6)
5)
Symbol VF Irr Qrr trr Erec
Conditions IF = 600 A Tvj = 25 C Tvj = 125 C Tvj = 25 C VCC = 3600 V, IF = 600 A, VGE = 15 V, RG = 3.9 L = 280 nH inductive load Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
min
typ 3.2 3.4 790 990 700 1200 1700 2200 1100 2200
max 3.8 4.0
Unit V A C ns mJ
Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy
5) 6)
Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level
7)
Package properties
Parameter IGBT thermal resistance junction to case Diode thermal resistance junction to case Thermal resistance case to heatsink
Symbol Rth(j-c)IGBT Rth(j-c)DIODE
2)
Conditions
min
typ
max
Unit
0.011 K/W 0.021 K/W per module, grease = 1W/m x K f = 50 Hz, QPD 10pC (acc. to IEC 61287) 5100 600 0.006 K/W V
Rth(c-s) Ve CTI
Partial discharge extinction voltage Comparative tracking index
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
7)
Mechanical properties
Parameter Dimensions Clearance distance in air Surface creepage distance Mass
7)
Symbol LW da ds m
x x
Conditions according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term:
min
x
typ
x
max
Unit mm mm mm
H Typical , see outline drawing
190 140 48 40 26 64 56 1760
g
Package and mechanical properties according to IEC 60747 - 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1558-02 Jan 06 page 3 of 9
5SNA 0600G650100
Electrical configuration
5 3 7 9
2 1 4 6 8
Outline drawing
2)
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1558-02 Jan 06 page 4 of 9
5SNA 0600G650100
1200
1200 VCE = 20 V
1000 25 C 800 125 C IC [A] 600
1000
800
IC [A]
600
400
400 125 C
25 C
200
VGE = 15V
200
0 0 1 2 3 4 VCE [V] 5 6 7 8
0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V]
Fig. 1
Typical on-state characteristics, chip level
Fig. 2
Typical transfer characteristics, chip level
1200
1200 17V
1000 17V 800 15V IC [A] 13V 600 11V
1000
15V 13V
800
11V
IC [A]
600
400
400 9V
200
9V Tvj = 25 C
200 Tvj = 125 C 0 8 0 1 2 3 4 5 VCE [V] 6 7 8 9 10
0 0 1 2 3 4 VCE [V] 5 6 7
Fig. 3
Typical output characteristics, chip level
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1558-02 Jan 06 page 5 of 9
5SNA 0600G650100
14 VCC = 3600 V RG = 3.9 ohm VGE = 15 V Tvj = 125 C L = 280 nH
20 18 16 14 Eon, Eoff [J] 12 10 8 6 4 Eoff VCC = 3600 V IC = 600 A VGE = 15 V Tvj = 125 C L = 280 nH Eon
12
10
Eon, Eoff [J]
8 Eon 6 Eoff
4
2 2
Esw [J] = 6.77 x 10-6 x I C2 + 6.6 x 10-3 x IC + 1.52
0 0 300 600 IC [A] 900 1200
0 0 10 20 RG [ohm] 30 40
Fig. 5
Typical switching energies per pulse vs collector current
Fig. 6
Typical switching energies per pulse vs gate resistor
10 VCC = 3600 V RG = 3.9 ohm VGE = 15 V Tvj = 125 C L = 280 nH td(on), tr, td(off), tf [s]
10 td(off)
td(off) td(on), tr, td(off), tf [s]
td(on)
tf 1
tr 1 tf
td(on)
tr 0.1 0 300 600 IC [A] 900 1200 0.1 0 10 20 RG [ohm]
VCC = 3600 V IC = 600 A VGE = 15 V Tvj = 125 C L = 280 nH 30 40
Fig. 7
Typical switching times vs collector current
Fig. 8
Typical switching times vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1558-02 Jan 06 page 6 of 9
5SNA 0600G650100
1000
20 VGE = 0V fOSC = 1 MHz VOSC = 50 mV Cies 15
VCC = 3600 V
100
VGE [V] Coes
10
C [nF]
10
5 Cres
IC = 600 A Tvj = 25 C 0
15 20 VCE [V] 25 30 35
1 0 5 10
0
1
2
3 4 Qg [C]
5
6
7
Fig. 9
Typical capacitances vs collector-emitter voltage
Fig. 10
Typical gate charge characteristics
2.5 VCC 4400 V, Tvj = 125 C, VGE = 15 V RGoff = 3.9 ohm, L 280 nH 2
1.5 ICpulse / IC 1 0.5 Chip Module 0 0 1000 2000 3000 4000 VCE [V] 5000 6000 7000
Fig. 11
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1558-02 Jan 06 page 7 of 9
5SNA 0600G650100
3000 VCC = 3600 V RG = 3.9 ohm Tvj = 125 C L = 280 nH Erec
2500 1200 Qrr 2000
RG = 3.9 ohm RG = 2.7 ohm
2500
1000
Erec [mJ], Qrr [C], Irr [A]
2000
Qrr 1500
RG = 8.2 ohm
1500 Irr 1000
Erec 1000
RG = 15 ohm
600
Irr
RG = 27 ohm
400 VCC = 3600 V IF = 600 A Tvj = 125 C L = 280 nH 2 3 4
500
Erec [mJ] = -1.2 x 10-3 x I F2 + 3.43 x I F + 530
500
200
0 0 300 600 IF [A] 900 1200
0 0 1 di/dt [kA/s]
0
Fig. 12
Typical reverse recovery characteristics vs forward current
Fig. 13
Typical reverse recovery characteristics vs di/dt
1200
1400 VCC 4400 V di/dt 4000 A/s Tvj = 125 C L 280 nH
1000
1200
1000 800 25 C 125 C IF [A] 600 IR [A] 800
600 400 400 200
200
0 0 1 2 VF [V] 3 4 5
0 0 1000 2000 3000 4000 5000 VR [V] 6000 7000
Fig. 14
Typical diode forward characteristics, chip level
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1558-02 Jan 06 page 8 of 9
Qrr [C], Irr [A]
800
Erec [mJ]
RG = 5.6 ohm
5SNA 0600G650100
0.1
Analytical function for transient thermal impedance:
Zth(j-c) Diode Zth(j-c) [K/W] IGBT, DIODE 0.01 Zth(j-c) IGBT
Z th (j-c) (t) = R i (1 - e -t/ i )
i =1
2 2 5.84 4.2 5.83 i 1 8.5 151 17 144 3 4 5
IGBT
n
Ri(K/kW) i(ms) Ri(K/kW) i(ms)
0.001
0.0001 0.001 0.01 0.1 t [s] 1 10
Fig. 16
Thermal impedance vs time
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
DIODE
Doc. No. 5SYA1558-02 Jan 06

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